Representation results for defeasible logic

The importance of transformations and normal forms in logic programming, and generally in computer science, is well documented. This paper investigates transformations and normal forms in the context of Defeasible Logic, a simple but efficient formalism for nonmonotonic reasoning based on rules and priorities. The transformations described in this paper have two main benefits: on one hand they can be used as a theoretical tool that leads to a deeper understanding of the formalism, and on the other hand they have been used in the development of an efficient implementation of defeasible logic.Comment: 30 pages, 1 figur

Critical Opalescence in Baryonic QCD Matter

We show that critical opalescence, a clear signature of second-order phase transition in conventional matter, manifests itself as critical intermittency in QCD matter produced in experiments with nuclei. This behaviour is revealed in transverse momentum spectra as a pattern of power laws in factorial moments, to all orders, associated with baryon production. This phenomenon together with a similar effect in the isoscalar sector of pions (sigma mode) provide us with a set of observables associated with the search for the QCD critical point in experiments with nuclei at high energies.Comment: 7 pages, 1 figur

On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well

The robustness of ultra-high voltage (>10kV) SiC IGBTs comprising of an optimized retrograde p-well is investigated. Under extensive TCAD simulations, we show that in addition to offering a robust control on threshold voltage and eliminating punch-through, the retrograde is highly effective in terms of reducing the stress on the gate oxide of ultra-high voltage SiC IGBTs. We show that a 10 kV SiC IGBT comprising of the retrograde p-well exhibits a much-reduced peak electric field in the gate oxide when compared with the counterpart comprising of a conventional p-well. Using an optimized retrograde p-well with depth as shallow as 1 μm, the peak electric field in the gate oxide of a 10kV rated SiC IGBT can be reduced to below 2 MV.cm -1 , a prerequisite to achieve a high-degree of reliability in high-voltage power devices. We therefore propose that the retrograde p-well is highly promising for the development of>10kV SiC IGBTs

Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations

The cubic polytype (3C-) of Silicon Carbide (SiC) is an emerging semiconductor technology for power devices. The featured isotropic material properties along with the Wide Band Gap (WBG) characteristics make it an excellent choice for power Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Nonetheless, material related limitations originate from the advantageous fact that 3C-SiC can be grown on Silicon (Si) wafers. One of these major limitations is an almost negligible activation of the p-type dopants after ion implantation because the annealing has to take place at relatively low temperatures. In this paper, a novel process flow for a vertical 3C-SiC-on-Si MOSFET is presented to overcome the difficulties that currently exist in obtaining a p-body region through implantation. The proposed design has been accurately simulated with Technology Computer Aided Design (TCAD) process and device software and a comparison is performed with the conventional SiC MOSFET design. The simulated output characteristics demonstrated a reduced on-resistance and at the same time it is shown that the blocking capability can be maintained to the same level. The promising performance of the novel design discussed in this paper is potentially the solution needed and a huge step towards the realisation of 3C-SiC-on-Si MOSFETs with commercially grated characteristics

An empirical study on the preferred size of the participant information sheet in research

Background: Informed consent is a requirement for all research. It is not, however, clear how much information is sufficient to make an informed decision about participation in research. Information on an online questionnaire about childhood development was provided through an unfolding electronic participant sheet in three levels of information. \ud Methods: 552 participants, who completed the web-based survey, accessed and spent time reading the participant information sheet (PIS) between July 2008 and November 2009. The information behaviour of the participants was investigated. The first level contained less information than might be found on a standard PIS, the second level corresponded to a standard PIS, and the third contained more information than on a standard PIS. The actual time spent on reading the information provided in three incremental levels and the participants' evaluation of the information were calculated. \ud Results: 77% of the participants chose to access the first level of information, whereas 12% accessed the first two levels, 6% accessed all three levels of information and 23% participated without accessing information. The most accessed levels of information were those that corresponded to the average reading times. \ud Conclusion: The brief information provided in the first level was sufficient for participants to make informed decisions, while a sizeable minority of the participants chose not to access any information at all. This study adds to the debate about how much information is required to make a decision about participation in research and the results may help inform the future development of information sheets by providing data on participants' actual needs when deciding about questionnaire surveys.\u